Photo-Effects in In/p-CuInSe2 Schottky-Type Junction |
| A. Opanowicz and B. Kościelniak-Mucha Institute of Physics, Technical University of Łódź, Wólczańska 219, 93-005 Łódź, Poland |
| Received: August 8, 1990 |
| Full Text PDF |
| The voltage-dependent photocurrent and the short-circuit photocurrent generated by the modulated light in the In/p-CuInSe2 junction were measured. The results suggest that the recombination of carriers occurs in the metal-semiconductor interface as well as in the recombination centres present in the space charge region of the junction. Both the interface recombination and the recombination in the centres can be modified by illumination of the junction. |
| DOI: 10.12693/APhysPolA.79.411 PACS numbers: 72.40.+w, 73.40.Qv |