Electrical Properties of Au/n-GaAs1-xSbx Contacts |
| J. Szatkowski, J.F. Kasprzak, E. Płaczek-Popko and E.B. Radojewska Institute of Physics, Technical University of Wrocław, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland |
| Received: August 8, 1990 |
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| The Schottky barrier heights of Au on n-type GaAs1-xSbx were measured with I-V, C-V, and photoresponse (PR) techniques. The barrier height was determined to be 0.65, 0.75 and 0.7 eV, respectively. |
| DOI: 10.12693/APhysPolA.79.179 PACS numbers: 72.80.Ey, 73.40.Ei |