Resonant Photoemission Study of Cd1-xFexSe Valence Band
B.A. Orłowskia, J. Fraxedasb, R. Deneckec, B.J. Kowalskia, A. Mycielskia and L. Leyc
aInstitute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
bMax-Planck Institut für Festkörperforschung, Heisenbergstr. 1, D-7000, Stuttgart, Germany
cInstitut für Technische Physik, Universität Erlangen-Nürnberg, Erwin-Rommelstr. 1, D-8520 Erlangen, Germany
Received: August 8, 1990
Full Text PDF
The phenomenon of Fano type resonant photoemission was used to distinguish the Fe electrons derived partial contribution to the valence band of a semimagnetic semiconductor Cd1-xFexSe. The states appearing at the middle of the valence band correspond to the Fe 3d electrons while the step of the density of states obtained at the valence band edge region correspondsvto the hybridized s-p-d electrons.
DOI: 10.12693/APhysPolA.79.355
PACS numbers: 71.20.Fi, 79.60.Eq