Heterogeneous Amorphization of Cd Implanted GaAs at Room Temperature |
| J. Krynicki, H. Rzewuski, Instytut Chemii i Techniki Jądrowej, Dorodna 16, Warszawa, Poland R. Groetzschel Zentralinstitut für Kernforschung Rossendorf/Dresden, Germany and A. Claverie CEMES-LOE CNRS, 31055 Toulouse, France |
| Received: August 8, 1990 |
| Full Text PDF |
| Amorphization of GaAs implanted with Cd in the dose range of 2 x 1013-1.2 x 1014 ions/cm2 and the energy range of 20 to 180 keV at room temperature has been investigated. The degree and the depth distributions of postimplanted damage were measured by using RBS technique. The critical dose for each Cd-ion energy was determined. The amorphization models have been discussed. The results obtained are in agreement with theoretical predictions supporting heterogeneous amorphization of Cd-implanted GaAs at room temperature. |
| DOI: 10.12693/APhysPolA.79.349 PACS numbers: 61.80.Jh, 61.70.Tm |