The Pressure Dependence of Transition Metal-Related Levels in GaAs |
| A. Babiński, M. Baj and A.M. Hennel Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland |
| Received: August 8, 1990 |
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| The hydrostatic pressure coefficients of V3+/2+ acceptor level in bulk GaAs and of the 0.48 eV trap (related to Ni2+/1+ double acceptor level) in VPE GaAs were measured by means of the DLTS technique. The obtained values are 94 meV/GPa and 196 meV/GPa relative to the bottom of the conduction band. For Ni2+/1+ level the strong pressure dependence of the capture cross-section activation energy (60 meV/GPa) was also observed. |
| DOI: 10.12693/APhysPolA.79.323 PACS numbers: 71.55.Eq, 62.50.+p |