Transient Photo-Induced Current Measurements in High Resistivity ZnSe Crystals
W. Bała, F. Firszt, D. Dul
Institute of Physics, N. Copernicus University, Grudziądzka 5/7, 87-100 Toruń, Poland

Z. Turlo and J. Borkowski
Laboratory of Astrophysics, Polish Academy of Sciences, Chopina 12/18, 87-100 Toruń, Poland
Received: August 8, 1990
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Using technique of computerized signal-averaging of photocurrent transient, we have studied the details of deep level states in high resistivity ZnSe crystals. The time resolved spectra of photocurrent and four-gate PICT spectra are presented.
DOI: 10.12693/APhysPolA.79.295
PACS numbers: 72.20.Jv, 72.40.+w