Temperature and Composition Dependence of Photovoltaic Spectra of Pb1-xMnxSe Diodes |
| Le-Van-Khoi, A. Szczerbakow, G. Karczewski and R.R. Gałązka Institute of Physics, Polish Academy of Sciences, Al.Lotników 32/46, 02-668 Warszawa, Poland |
| Received: August 8, 1990 |
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| Photovoltaic spectra of Pb1-xMnxSe homojunctions have been measured in the infrared spectral region within the temperature range 15-300 K. The junctions have been formed by cadmium diffusion into the p-type Pb1-xMnxSe crystals with manganese content 0 ≤ x ≤ 0.08. From the positions of the photovoltaic maxima the energy band gap of the diode material has been determined. A phenomenological expression describing the energy band gap of Pb1-xMnxSe as a function of temperature and crystal composition has been proposed. In diodes containing high manganese content x = 0.06 and x = 0.08 a second photovoltaic maximum caused by indirect optical transitions between the main conduction band and the secondary valence band located along the ∑-axis of the Brillouin zone has been observed. |
| DOI: 10.12693/APhysPolA.79.287 PACS numbers: 71.25.Tn |