Temperature and Composition Dependence of Photovoltaic Spectra of Pb1-xMnxSe Diodes
Le-Van-Khoi, A. Szczerbakow, G. Karczewski and R.R. Gałązka
Institute of Physics, Polish Academy of Sciences, Al.Lotników 32/46, 02-668 Warszawa, Poland
Received: August 8, 1990
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Photovoltaic spectra of Pb1-xMnxSe homojunctions have been measured in the infrared spectral region within the temperature range 15-300 K. The junctions have been formed by cadmium diffusion into the p-type Pb1-xMnxSe crystals with manganese content 0 ≤ x ≤ 0.08. From the positions of the photovoltaic maxima the energy band gap of the diode material has been determined. A phenomenological expression describing the energy band gap of Pb1-xMnxSe as a function of temperature and crystal composition has been proposed. In diodes containing high manganese content x = 0.06 and x = 0.08 a second photovoltaic maximum caused by indirect optical transitions between the main conduction band and the secondary valence band located along the ∑-axis of the Brillouin zone has been observed.
DOI: 10.12693/APhysPolA.79.287
PACS numbers: 71.25.Tn