Current-Voltage Characteristic of Semi-Insulating GaAs, with Trap-Filling Effect |
| K. Karpińska and J. Łusakowski Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland |
| Received: August 8, 1990 |
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| A detailed investigation of current-voltage (I- V)characteristics of semi-insulating GaAs sample was performed in the vicinity of room temperature. The sample with 300 K resistivity of 2 x 107 Ω cm was supplied with guard-ring electrodes which allowed the elimination of surface currents. The observed characteristics started with an ohmic part which was followed by a superlinear current on voltage dependence. At a threshold voltage Vth which corresponds to the electric field of about 2 kV/cm the current increased abruptly by a few orders of magnitude. The value of Vth increased with the temperature. It is proposed that the observed shape of the I-V curve is caused by the filling of the EL2 level with injected electrons heated by the electric field. |
| DOI: 10.12693/APhysPolA.79.281 PACS numbers: 72.20.Jv |