Passivation of a Bulk Defect Ec-0.22 eV in GaAs by Contact with Phosphoric Acid |
| A. Babiński and E. Gołdys Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland |
| Received: August 8, 1990 |
| Full Text PDF |
| The Ec-0.22 eV trap in Horizontal Bridgman undoped n-type GaAs may be passivated by contact with phosphoric acid for 8 hours at room temperature. Isochronal annealing, at around 250°C for 1 hour resulted in the partial recovery of this defect. The possible mechanisms of Ec-0.22 eV trap passivation are proposed. |
| DOI: 10.12693/APhysPolA.79.277 PACS numbers: 71.55.Eq, 81.60.Cp, 61.70.At |