On DLTS Experiments with Extended Defects |
| Wiktor Szkiełko Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland |
| Received: August 8, 1990 |
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| It is shown that the line shape of DLTS spectra measured in silicon with a high concentration of extended defects can be consistently explained if the both processes, thermal emission and tunneling of majority carriers from charged defects, are taken into account. |
| DOI: 10.12693/APhysPolA.79.271 PACS numbers: 71.55.-i |