On the Tunneling Among Shallow and Deep Centers in ZnS
A. Zakrzewski and A. Sienkiewicz
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, Warszawa, Poland
Received: August 8, 1990
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Results of the photo-ESR studies of recharging processes due to tunneling in ZnS:Cu crystals are presented. It was found that the tunneling among shallow and deep centers seems to be a second order effect in the overall photoluminescence quenching in ZnS by transition metal impurities.
DOI: 10.12693/APhysPolA.79.251
PACS numbers: 72.20.Jv, 76.30.Fc