On the Tunneling Among Shallow and Deep Centers in ZnS |
| A. Zakrzewski and A. Sienkiewicz Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, Warszawa, Poland |
| Received: August 8, 1990 |
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| Results of the photo-ESR studies of recharging processes due to tunneling in ZnS:Cu crystals are presented. It was found that the tunneling among shallow and deep centers seems to be a second order effect in the overall photoluminescence quenching in ZnS by transition metal impurities. |
| DOI: 10.12693/APhysPolA.79.251 PACS numbers: 72.20.Jv, 76.30.Fc |