New Electrical characterization of the Metal-Semiconductor Interface in GaAs Schottky Junctions |
| Zs. J. Horváth Research Institute for Technical Physics, Hungarian Academy of Sciences, Budapest, P.O.Box 76, H-1325, Hungary |
| Received: August 8, 1990 |
| Full Text PDF |
| The new possibilities of the electrical characterization of the metal-semiconductor interface in Schottky junctions are briefly outlined and demonstrated by using an example of experimental results taken from the literature. The interface parameters obtained for GaAs Schottky junctions with different metallizations are summarized. |
| DOI: 10.12693/APhysPolA.79.167 PACS numbers: 73.30.+y |