Detection of Persisting Photoelectrons in AlGaAs Double Heterostructure Laser Diodes by DLTS |
| S. Brehme Central Institute of Electron Physics, Academy of Science of GDR, Hausvogteiplatz 5-7, Berlin 1086, Germany |
| Received: August 8, 1990 |
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| LPE-made AlGaAs double heterostructure laser diodes having a Sn-doped n-type confinement layer were investigated. A significant change of the low-temperature part of DLTS spectra and C(T) curves was observed after applying forward or higher reverse voltage. Relaxation of the curves took several hours. This persistent photoconductivity phenomenon is explained by photoionization of the DX centres. |
| DOI: 10.12693/APhysPolA.79.239 PACS numbers: 71.55.Eq |