Amorphous Hydrogenated Silicon Films Studied by Schottky Barrier Method |
| A. Kołodziej and T. Pisarkiewicz Academy of Mining and Metallurgy, Institute of Electronics, al.Mickiewicza 30, 30-059 Kraków, Poland |
| Full Text PDF |
| The problem of the effective ohmic junction and the question of the barrier height for thin film structures of Al/a-Si:H/n+c-Si/Al and Al/a-Si:H/n+c-Si/Mo are studied. Current-voltage and temperature characteristics were measured and possible mechanisms of conductivity were extracted and discussed. |
| DOI: 10.12693/APhysPolA.79.229 PACS numbers: 72.80.Ng |