Characterization of the Band Bending in ZnSe-GaAs Heterojunctions by Raman Scattering |
| W. Bała Institute of Physics, N. Copernicus University, Grudziądzka 5/7, 87-100 Toruń, Poland M. Drozdowski and M. Kozielski Institute of Physics, Poznań Technical University, Piotrowo 3, 60-965 Poznań, Poland |
| Received: August 8, 1990 |
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| The band bending effect at the ZnSe-GaAs interface Was studied by means of Raman scattering induced by electric-field related to longitudinal-optical (LO) phonons. It has been shown that the variation of the band bending in GaAs can be modifled by changes in the electron concentration of ZnSe epilayer and the variation of the sample temperature. |
| DOI: 10.12693/APhysPolA.79.225 PACS numbers: 78.30.Hv, 61.70.Wp |