Electrical Properties of Hydrogenated Amorphous Si1-xGex Thin Films |
| T. Pisarkiewicz, T. Stapiński and A. Kołodziej Academy of Mining and Metallurgy, Cracow, Institute of Electronics, Al. Mickiewicza 30, 30-059 Kraków, Poland |
| Received: August 8, 1990 |
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| Thin films of hydrogenated amorphous Si-Ge alloys were obtained by r.f. sputtering in Ar + H2 gas atmosphere using composite targets of Si and Ge. Dark conductivity and photoconductivity were measured in the temperature range of 300-500 K for films with x varying from 0.11 to 0.63. Both dark conductivity and photoconductivity exibit activation type dependences in the temperature range studied. Heterogeneity two-phase model and a model based on Fermi level shift with temperature were invoked to discuss the conduction mechanism. |
| DOI: 10.12693/APhysPolA.79.203 PACS numbers: 72.80.Ng, 72.40.+w, 73.60.Gx |