Physics of GaAs/AlAs Superlattices
R. Planel and F. Mollot
Laboratoire de Microstructures et Microélectronique, Centre National de la Recherche Scientifique, 196, avenue Henri-Ravera, F-92220 Bagneux, France
Received: August 8, 1990
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We describe the main problems encountered in MBE growth of GaAs/AlAs superlattices and heterostructures. Then, basic features for the understanding of their electronic properties are given, in the envelope-function formalism, and some related optical experiments are reviewed.
DOI: 10.12693/APhysPolA.79.71
PACS numbers: 68.55.Bd; 78.65.Fa