Semi-Insulating Transition Metal-Doped III-V Materials
Andrzej M. Hennel
Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
Received: August 8, 1990
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This review surveys the properties of transition metal (TM) doped semi-insulating (SI) III-V semiconductors. After a general definition of a SI material, a simple model of a SI crystal with a midgap donor and shallow impurities is discussed. A short history, main properties, and thermal stability problems of SI Cr-doped GaAs are presented. The puzzling problem of SI V-doped GaAs is explained. Several dopants (Cr, Fe, Co, and Ti) in SI InP are discussed in terms of the resistivities obtained, as well as thermal stability. Finally, GaP and GaInAs high resistivity systems are considered.
DOI: 10.12693/APhysPolA.79.15
PACS numbers: 71.55.Eq, 72.80.Ey, 81.60.Cp