Intra-Shallow-Donor Photoconductivity in Semi-Insulating GaAs |
| K. Karpierz, Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland and M.L. Sadowski High Pressure Research Centre, Polish Academy of Sciences, Warsaw, Poland |
| Received: August 8, 1990 |
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| The far-infrared photoconductivity of a semi-insulating GaAs sample was measured at 4.2 K as a function of magnetic field up to 7 T. Apart from a peak corresponding to the 1s - 2p+1 transition of the hydrogen-like shallow donor, a well-pronounced structure was observed which does not appear in n-type GaAs. |
| DOI: 10.12693/APhysPolA.79.121 PACS numbers: 72.40.+w, 78.20.ls, 78.50.Ec,Ge |