Intra-Shallow-Donor Photoconductivity in Semi-Insulating GaAs
K. Karpierz,
Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

and M.L. Sadowski
High Pressure Research Centre, Polish Academy of Sciences, Warsaw, Poland
Received: August 8, 1990
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The far-infrared photoconductivity of a semi-insulating GaAs sample was measured at 4.2 K as a function of magnetic field up to 7 T. Apart from a peak corresponding to the 1s - 2p+1 transition of the hydrogen-like shallow donor, a well-pronounced structure was observed which does not appear in n-type GaAs.
DOI: 10.12693/APhysPolA.79.121
PACS numbers: 72.40.+w,, 78.50.Ec,Ge