Experimental Analysis and Computational Modeling of Residual Stress in β-Ga2O3 Thin Films Grown on Si by RF Magnetron Sputtering

A. Revenkoa, V. Kidalovb, c, D. Dulebaa, M. Derhachovd, R. Redkoe, R.P. Johnsona, M.A. Assmannb, O. Gudymenkoe, O. Sushkod, M. Koptievd aSchool of Chemistry, University College Dublin, Belfield, Dublin 4, D04 N2E5, Dublin, Ireland bExperimentelle Physik 2, Technische Universitat Dortmund, Otto-Hahn-Straße 4a, 44227, Dortmund, Germany cDmytro Motornyi Tavria State Agrotechnological University, B. Khmelnytsky Ave 18, 72312, Melitopol, Ukraine dOles Honchar Dnipro National University, Nauky Ave 72, 49010, Dnipro, Ukraine eV.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, Nauky Ave 45, 02000 Kyiv, Ukraine

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Gallium oxide is becoming increasingly attractive as a next-generation material for semiconductor applications, prompting the need for efficient and economical techniques for thin-film fabrication, especially on non-native substrates. In this work, β-Ga2O3 films with a thickness of 0.25 μm were grown on a silicon substrate via radio-frequency magnetron sputtering. Raman spectroscopy and X-ray diffraction analysis confirmed the good crystalline quality of the synthesized β-Ga2O3 films. The mechanical stresses in the β-Ga2O3/Si heterostructure were measured using X-ray diffraction. A comparative analysis with simulated data obtained via finite element modeling demonstrated good correlation between experiment and theory.

DOI:10.12693/APhysPolA.148.158 topics: Ga2O3 and Si, Raman spectroscopy, mechanical stress, radio-frequency (RF) magnetron sputtering