Growing Perfect Single-Crystal Epitaxial Films of (Si2)1-x(GaN)x Solid Solutions on Si (111) Substrates from the Liquid Phase

A.S. Saidova, Sh.N. Usmonova, M.U. Kalanovb, D.V. Saparova, T.T. Ishniyazova, A.M. Akhmedovc, M.B. Tagaevd, A.Sh. Razzokove aPhysical-Technical Institute, Uzbekistan Academy of Sciences, 2B Ch. Aytmatov St., 100084 Tashkent, Uzbekistan bInstitute of Nuclear Physics, Uzbekistan Academy of Sciences, 1 Khurasan St., 100214 Tashkent, Uzbekistan cTashkent Institute of Irrigation and Agricultural Mechanization Engineers, 39 Kori Niyoziy St., 100084 Tashkent, Uzbekistan dKarakalpak State University named after Berdak, 1 Ch. Abdirov St., 230112 Nukus, Republic of Karakalpakstan, Uzbekistan eUrgench State University, 14 Kh. Alimdjan St., 220100 Urgench City, Uzbekistan

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The technological capabilities of the method of liquid-phase epitaxy from a limited volume of Sn solution-melt for obtaining films of substitutional solid solution (Si2)1-x(GaN)x on Si (111) substrates are shown. The grown films had a single-crystal structure with (111) orientation, n-type conductivity with a resistivity of ρ≃1.38 Ω cm, a carrier concentration of n≃3.4×1016 cm-3, and a charge carrier mobility of μ≃133 cm2/(V s). The relatively narrow width (full width at half maximum of 780 arcsec) and high intensity (2×105 pulses/s) of the main structural reflection (111)Si/GaN indicate a high degree of perfection of the crystal lattice of the epitaxial layer (Si2)1-x(GaN)x. The photosensitivity region of p-Si-n-(Si2)1-x(GaN)x heterostructures covers the photon energy range from 1.2 to 2.4 eV, with a maximum at 1.9 eV.

DOI:10.12693/APhysPolA.148.29 topics: epitaxial film, X-ray diffraction analysis, spectral photosensitivity