ACTA

Investigation of Temperature-Dependent Photoluminescence Mechanisms in Porous Silicon Layer for Optoelectronic Devices

I. Tifouti^a, B. Meriane^a, S. Rahmouni^a, N. Boukhanoufa^b, H. Bendjeffal^a
^aLaboratory of Physical Chemistry and Biology of Materials, Higher Normal School of Technological Education ENSET, Bousta St., 21000, Skikda, Algeria
^bElectronic Department, University of Batna, Fesdis St., 05000, Batna, Algeria

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This study examines how the variation of temperature affects the photoluminescence properties of porous silicon, offering insights into surface, defects, and carrier dynamics interactions. Porous layers are obtained using an electrochemical method, revealing two notable photoluminescence emission peaks. The study suggests two different non-radiative recombination processes based on intensity changes with temperature. Surface conditions contribute to the thermal quenching of the photoluminescence at low temperatures (10-60 K), while non-radiative recombination is linked to the thermal escape of excitons at higher temperatures (60-300 K). A comprehensive understanding of these processes is essential for effective integration of optoelectronic devices.

DOI:10.12693/APhysPolA.147.449
topics: porous silicon (PSi), photoluminescence (PL), optoelectronic, low temperature