Temperature Dependence of the Occupancy of Landau Subbands in a Two-Dimensional Electron Gas |
| B.T. Abdulazizova, P.J. Baymatova, A.A. Saydalievb, O.M. Yunusovc, K.N. Juraevc, d
aNamangan State University, Uychinskaya 316, 716019 Namangan, Uzbekistan bNamangan Institute of Engineering and Technology, Kosonosoy Street 7, 160115 Namangan, Uzbekistan cPhysical-Technical Institute of Uzbekistan Academy of Sciences, Chingiz Aytmatov str. 2B, 100084 Tashkent, Uzbekistan dTashkent Institute of Irrigation and Agricultural Mechanization Engineers, Kori Niyoziy 39, 100084 Tashkent, Uzbekistan |
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| Numerical modeling has been used to study the temperature dependence of the chemical potential and the occupation of the Landau subbands in a two-dimensional electron gas. Calculations were performed for various values of the filling factor ν, taking into account the level broadening due to scattering events. Graphs depicting the temperature dependence of the electron concentration within the Landau subbands were constructed. These dependencies enable the analysis of the thermal excitations of electrons between subbands. Additionally, a simple model was used to identify the thermal excitations of electrons within a single subband. |
DOI:10.12693/APhysPolA.147.352 topics: heterostructure, quantum well, two-dimensional electron gas, Landau levels |