Assessing the Performance of Solar Cells Based on MoS2: WS2 and WSe2 Buffer Layers Effects

A. Aouragha, F. Selloumb, S. Djeffalb, T. Bouarroudjc, C. Shekhard, S. Maamrie, B. Zaidib aDepartment of Chemistry, Faculty of Material Sciences, University of Batna 1, Batna, Algeria bDepartment of Physics, Faculty of Material Sciences, University of Batna 1, Batna, Algeria cScientific and technical research center in physico-chemical analyses (CRAPC), BP 384, Bou-ismail, RP 42004, Tipaza, Algeria dDepartment of Applied Physics, Amity University Gurgaon, Haryana, India 122413 eDepartment of Applied physics, Faculty of Sciences, University of Salamanca 1, Salamanca, Spain

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In this study, we simulated the performance of solar cells using appropriate optical and electrical parameters for MoX2 compounds. We used the solar cell capacitance simulator software to simulate MoS2-based solar cells with two structures (ZnO/WS2/MoS2 or ZnO/WSe2/MoS2). We investigated the impact of varying the thickness of the MoS2 absorbing layer, doping, temperature elevation, and exploring the effect of the buffer layer on the electrical characteristics of the solar cell, including parameters like open-circuit voltage (Voc), short-circuit current (Jsc), and solar cell efficiency (η). This analysis aimed to provide valuable insights into optimizing the design and performance of MoS2-based solar cells, contributing to advancements in thin-film solar cell technology.

DOI:10.12693/APhysPolA.145.242 topics: WS2, WSe2, MoS2, solar cell, thin film, solar cell capacitance simulator (SCAPS-1D)