Optical and X-Ray Studies of Indium Oxide Films Deposited by DC Magnetron Sputtering

A.A. Tikhiia, E.A. Sviridovab, c, Y.I. Zhikharevad, e, I.V. Zhikharevb aLugansk State Pedagogical University, Oboronnaya str., 2, 91011 Lugansk, Ukraine bDonetsk Institute for Physics and Engineering named after A.A. Galkin, Rozy Lyuksemburg str. 72, 83114 Donetsk, Ukraine cDonbas National Academy of Civil Engineering and Architecture, Derzhavina str. 2, 86123 Makeyevka, Ukraine dTaras Shevchenko National University of Kyiv, Volodymyrska str. 64/13, 01601 Kyiv, Ukraine eInstitute of Industrial Economics of National academy of sciences of Ukraine, Maria Kapnist str. 2, 03057 Kyiv, Ukraine

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The results of our studies on the structure and optical properties of In2O3 films deposited by DC magnetron sputtering onto Al2O3 (012) substrates are summarized. The films differ in terms of deposition time and substrate temperature. X-ray diffraction shows that the position and half-width of the peak related to the (222) plane of the cubic modification of In2O3 depends on the deposition time. Ellipsometric and optical transmission measurements show that the refractive index of films deposited on substrates at room temperature increases in the direction from the substrate to the external interface. The refractive index of the films deposited at a substrate temperature of more than 300° is uniform, except for a rough layer on the surface. Annealing eliminates inhomogeneity of the refractive index and decreases the observed band gap for direct transitions. The latter results from a decrease in lattice defects concentration that causes a change in the Burstein-Moss shift. The true value of the band gap is insensitive to annealing.

DOI:10.12693/APhysPolA.145.67 topics: indium oxide films, band gap, optical properties, X-ray diffraction analysis