Electrical and Optical Properties of ZnO:Al/p-Si Heterojunction Diodes

M.A. Bouacheriaa, A. Djelloulb, L. Benharratb, M. Adnanea, H. Bencherifc aMaterial Technology Department, Faculty of Physics, USTO-MB, El Mnaouar Bir El Djir, BP 1505, 31000, Oran, Algeria bCentre de Recherche en Technologie des Semi-Conducteurs pour l'Energétique (CRTSE), 02 Bd Frantz Fanon, BP 140, 7 Merveilles, 16000, Algiers, Algeria cLEREESI, HNS-RE2SD, Higher National School of Renewable Energy, Environment & Sustainable Development, Constantine road, Fesdis, 05078, Batna, Algeria

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The study examines the optical and electrical characteristics of n-ZnO:Al (AZO) thin films that were deposited on p-Si using the sol-gel dip-coating process, with thicknesses ranging from three to six cycles. The I-V characteristics of the diode device exhibited a high and low current under forward and reverse bias, respectively. The ideality factors were found to decrease from 2.78 to 2.13 with an increase in the number of layers from 3C to 6C. However, it was revealed that the barrier height increased from 0.72 to 0.79 eV. Similarly, the rectification ratio increased from 3196 at ±4 V to 5253 at ±4 V with an increase in the thickness of the emitter layer. Some diode parameters were calculated according to the thermionic and Chueng models and found to be in a range comparable to the literature. The optical study based on photoluminescence under UV excitation showed typical emission spectra of n-AZO/-Si heterostructure characterized by a high emission band around 389 nm, which is due to the recombination of excitons (e-/h+). The various intrinsic defects present in ZnO-doped Al thin films are attributed to the broad emission band in the visible range. The chromaticity study with color properties indicated that the correlated color temperature value of the sample 3C (1380 K) falls in the warm white light region. However, the correlated color temperature value of sample 6C (4454 K) is located in the cool white light source region, which is more suitable as an LED lighting source. It was found that by increasing the emitter layer thickness, the correlated color temperature value of the 6C sample is getting closer to 6504 K - the Commission Internationale de l'Eclairage (CIE) standard for daylight (D65). However, unlike the Duv value of the 6C sample (0.011), the one of the 3C sample (0.0032) is located within the acceptable shift range (±0.006). Based on this study, these heterostructures might be an appealing option for manufacturing W-LEDs with n-UV/blue LED chips as the excitation source for use in displays and lighting.

DOI:10.12693/APhysPolA.145.47 topics: ZnO:Al/p-Si heterojunction, photoluminescence, CIE coordinates, CCT/Duv values