Enhanced Opto-Electronic Properties of Bi:CuO/n-Si Heterojunctions for Photodetector Applications |
| G. Sutcua, S. Yigit Gezginb, S. Baturayc, H.S. Kilicb, d, e
aDepartment of Physics, Institute of Natural Sciences, Dicle University, 21280 Diyarbakir, Turkey bDepartment of Physics, Faculty of Science, University of Selcuk, 42031 Selcuklu, Konya, Turkey cDepartment of Physics, Faculty of Science, Dicle University, 21280 Diyarbakir, Turkey dDirectorate of High Technology Research and Application Center, University of Selcuk, 42031 Selcuklu, Konya, Turkey eDirectorate of Laser Induced Proton Therapy Application and Research Center, University of Selcuk, 42031 Konya, Turkey |
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| An effective photodetector based on a family of p-type semiconductors with unique properties is still required by current trends in optoelectronics. The purpose of this study is to enhance the performance of p-type copper oxide films by doping them with bismuth. The pure copper oxide films were successfully fabricated with 1, 2, and 3 wt% of Bi by the spin coating method in an air atmosphere. Advanced techniques were used to describe the fabricated non-doped and Bi-doped CuO films to understand their structural, topological, and optical characteristics. X-ray diffraction patterns of non-doped and Bi-doped CuO films have demonstrated that they have polycrystalline structures, with a preference for growth in both (-111) and (200) orientations. Copper oxide film with 2% Bi doping exhibited the most uniform particle size distribution compared to others. While 3% Bi-doped CuO thin film exhibits the highest photon absorption, 2% Bi-doped CuO thin film transmits more photons. The direct band gaps of the non-doped and Bi-doped CuO samples were found between 1.77 and 1.94 eV. Copper oxide thin film with 2% Bi has the lowest refractive index. While the 2% Bi-doped CuO heterojunction photodetector shows the highest photosensitivity, responsivity, and detectivity, its rise and time are the lowest. Since 2% Bi-doped CuO film has a good crystal structure, large crystalline size, low particle boundary numbers, and a more homogeneous particle size distribution, the number of traps and defects in this thin film is low, and the recombination of charge carriers is limited. Thus, this thin-film-based heterojunction exhibited the best photodetector property, and the results of this work give a way to create effective photodetectors and adjust their performance over a broad range. |
DOI:10.12693/APhysPolA.145.3 topics: Bi-doped CuO, spin coating, photodetector, rise time |