Characterization of Doped ZnO Thin Film for Ammonia Gas Sensing Application |
| S. Joharia, b, F.A. Hasbullaha, A.S. Rosmana, M.M. Ramlia, b, M.F. Ahmada, b, N.A. Karimb, N.H. Osmanc, D. Darmintod, A.H. Reshake, f, S. Garusg
aFaculty of Electronic Engineering and Technology, Universiti Malaysia Perlis (UniMAP), Pauh Putra Campus, 02600 Arau, Perlis, Malaysia bInstitute of Nano Electronic Engineering, Universiti Malaysia Perlis (UniMAP), 01000, Kangar, Perlis, Malaysia cApplied Electromagnetic Laboratory 1, Department of Physics, Faculty of Science, Universiti Putra Malaysia (UPM), 43400 UPM Serdang, Selangor, Malaysia dDepartment of Physics, Faculty of Science and Data Analytics, Institut Teknologi Sepuluh Nopember, Campus ITS Sukolilo, Surabaya 60111, Indonesia ePhysics Department, College of Science, University of Basrah, Basrah 61004, Iraq fDepartment of Instrumentation and Control Engineering, Faculty of Mechanical Engineering, CTU in Prague, 616607 Prague, Czech Republic gDepartment of Mechanics and Fundamentals of Machinery Design, Faculty of Mechanical Engineering and Computer Science, Częstochowa University of Technology, Dąbrowskiego 73, 42-201 Częstochowa, Poland |
| Full Text PDF |
| This paper reports on the characterization of Sn- and Al-doped zinc oxide thin film for potential ammonia gas detection. The sol-gel method has been used to deposit the dopant onto the glass substrate at an annealing temperature of 500° for three different doping concentrations, which are 0.5, 1.0, and 1.5 at.%. The method used to produce this thin film is sol-gel, as it is cheap, easy, and can be employed at low temperatures. The studies involve the investigation of the morphological structures and electrical and optical properties of doped ZnO. In terms of structural properties, scanning electron microscope images of Sn- and Al-doped ZnO change as the dopant concentration is increased. The doped thin film response and recovery towards 200 ppm of ammonia were observed and recorded. Both dopants show good gas sensing response. The recorded resistance reading suggests that Al is the superior dopant in gas sensing as it produces a low resistance reading of 230 Ω as opposed to 140 kΩ produced by Sn-doped ZnO thin film. |
DOI:10.12693/APhysPolA.144.379 topics: gas sensor, semiconductor, ammonia, doped ZnO thin films |