Sb2(S,Se)3-Based Thin Film Solar Cells: Numerical Investigation

A. Khadira, b aMaterials Science and Informatics Laboratory, University of Djelfa, Cité 05 Juillet route Moudjbara BP: 3117, 17000, Djelfa, Algeria bLaboratory of Metallic and Semiconducting Materials, University of Biskra, BP 145 RP, 07000, Biskra, Algeria

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Recently, antimony selenosulfide Sb2(S,Se)3-based thin film devices have received particular attention from the research community. Nevertheless, their experimental power conversion efficiency is still below 10.5%. In the present work, a numerical study of ZnO:Al/i-ZnO/CdS/Sb2(S,Se)3/spiro-OMeTAD/contact structure is carried out using a one-dimensional solar cell capacitance simulator. In this study, we focus on investigating the effect of the carriers' densities in main layers, selenium (Se) content in the absorber with different profiles, and using Cu2O as an alternative hole transport layer. It is found that 1021, 1015, and 1021 cm-3 doping densities in CdS/absorber/hole transport layers, respectively, and gradient Se/(Se+S) content in the range of 0.8-0.9, with the use of Cu2O as a hole transport layer, give a remarkable power conversion efficiency of 19.84%.

DOI:10.12693/APhysPolA.144.52 topics: Sb2(S, Se)3, gradient bandgap, Cu2O, solar cell capacitance simulator (SCAPS)