Variable Energy Positron Beam Studies of Gold Exposed to Au+ and H+ Implantation |
| P. Horodeka, K. Siemeka, M.N. Mirzayevb, c, E.P. Popovd, e, A.A. Donkove, M. Kulikf, M. Turekf, M. Bielewiczg
aInstitute of Nuclear Physics, Polish Academy of Science, Krakow PL-31342, Poland bInstitute of Radiation Problems, Azerbaijan National Academy of Sciences, Baku, AZ1143, Azerbaijan cAzerbaijan State Oil and Industry University, Scientific-Research Institute Geotechnological Problems of Oil, Gas and Chemistry, AZ1010 Baku, Azerbaijan dInstitute for Nuclear Research and Nuclear Energy, Bulgarian Academy of Sciences, Sofia, 1784, Bulgaria eGeorgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, 1784, Sofia, Bulgaria fInstitute of Physics, Maria Curie-Skłodowska University, Pl. Marii Curie-Skłodowskiej 1, 20-031 Lublin, Poland gNational Centre for Nuclear Research, Otwock-Świerk, Poland |
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| The results of Doppler broadening of the annihilation line spectroscopy obtained using a variable energy positron beam for the pure gold samples exposed to 100 keV self-implantation and 250 keV H+ implantation are reported. The annihilation characteristics of parameter S as a function of positron energy were determined. Irradiation-induced defects were confirmed in all measured profiles. However, the S parameter distributions were not typical for the ion-implanted materials. No significant changes in the shape of defect profiles for non-defected and self-implanted samples were found. The implanted Au+ ions fill the earlier produced vacancies and decrease the overall defect concentration. In the case of 100 keV H+ implantation, the distribution does not cover the area with higher S values pointing out the presence of defects. This is caused by the localization of H+ inside the produced vacancies. The thicknesses of the damaged layers are smaller compared to those numerically predicted by the SRIM implantation ranges. The long-range effect was not observed. |
DOI:10.12693/APhysPolA.142.702 topics: positron beam, defects, hydrogen, ion implantation |