Radiation Resistance Studies of PIN Diode Detectors Irradiated with Heavy Ions

K.Z. Krutul-Bitowskaa, P.J. Napiorkowskia, K. Hadyńska-Klęka, P. Horodekb, M. Komorowskaa, A. Olejniczakc, M. Paluch-Ferszta, K. Siemekb, Z. Szeflińskia, M. Wróbeld, K. Wrzosek-Lipskaa aHeavy Ion Laboratory, University of Warsaw, Pasteura 5A, 02-093 Warsaw, Poland bInstitute of Nuclear Physics Polish Academy of Sciences, Radzikowskiego 152, 31-342 Krakow, Poland cNicolaus Copernicus University, Gagarina 11, 87-100 Torun, Poland dFaculty of Metals Engineering and Industrial Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Krakow, Poland

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The controlled destruction of the PIN diode detectors, SIEMENS SFH 870/F170 and SFH 871/F171, by the 35 MeV beam of the 12C and by 24 MeV of the 14N, respectively, was characterized using nuclear spectroscopy, the surface profile measurements, and the positron annihilation spectroscopy technique. The beam fluence was in the range of 1012-1014 ions/cm2. It has been shown that the fluence of 1012 ions/cm2 of the 12C beam did not allow it to destroy the PIN diode detector. For this purpose, one needs the fluence of at least 4×1012 ions/cm2 for the 14N ions beam and 2.2×1013 ions/cm2 for the 12C ions one. The presence of divacancies in the irradiated sample was detected by the positron lifetimes measurements, with the fraction significantly higher for the 12C implanted sample. Furthermore, it was found that the surface roughness changed drastically following the implantation, i.e., the arithmetic average of profile height deviations from the mean surface of the 14N beam implanted sample is significantly higher than of that irradiated with the 12C ions and the reference one, and the surface average roughness was about 2-3 times higher.

DOI:10.12693/APhysPolA.142.783 topics: heavy ion irradiation, PIN diode detector, positron lifetime spectroscopy