ACTA

Thermal Desorption of Kr Implanted into Germanium

M. Turek^a, A. Droździel^a, K. Pyszniak^a, S. Prucnal^a, J. Żuk^a, P. Węgierek^b
^aInstitute of Physics, Maria Curie-Skłodowska University in Lublin, Pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland
^bFaculty of Electrical Engineering and Computer Science, Lublin University of Technology, Nadbystrzycka 38A, 20-618 Lublin, Poland

Full Text PDF

Thermal desorption spectrometry measurements of Kr implanted with energies 100 keV and 150 keV (fluence 2×10¹⁶ cm^-2) into the Ge sample are considered. A sudden release of Kr is observed in the temperature range of 800-840 K. The very narrow peaks in the thermal desorption spectrometry spectra (width of several K) come most probably from the release of gas trapped in pressurized bubbles. Analysis of peak shifts with increasing heating rate enabled the estimation of the adsorption activation energy values of 2.5 eV and 2.3 eV for the implantation energies 100 keV and 150 keV, respectively. These values are comparable to those obtained for Ar implanted into the Ge samples and for Kr implanted into the Si samples.

DOI:10.12693/APhysPolA.142.776
topics: thermal desorption spectroscopy, ion implantation