Obtaining Si-Si1-xGex-(Si1-xGex)1-z(Al1-yGayAs)z-Si1-xGex-(Si1-xGex)1-z(Al1-yGayAs)z Structures from a Tin Solution-Melt in a Single Technological Cycle

A.S. Saidova, A.Sh. Razzokovb, S.I. Petrushenkoc, S.V. Dukarovc aPhysical-Technical Institute NPO ``Physics-Sun'' of the Academy of Sciences of the Republic of Uzbekistan, Ch. Aitmatova 2B, 100084, Tashkent, Uzbekistan bUrgench State University, Urgench, Kh. Alimjan 14, 220100, Uzbekistan cV.N. Karazin Kharkiv National University, Svobody square 4, 61077, Kharkiv, Ukraine

Full Text PDF

From a limited tin solution-melt in the temperature range of 950-700°, Si-Si1-xGex-(Si1-xGex)1-z(Al1-yGayAs)z-Si1-xGex-(Si1-xGex)1-z(Al1-yGayAs)z structures on Si ⟨111⟩ substrates were grown by liquid-phase epitaxy in a single technological cycle. Using a scanning electron microscope, the layered composition of the grown films was determined. X-ray diffraction studies of the structure showed the dependence of the crystalline perfection of the film on the technological growth regime. The optimum mode of forced cooling rate (1 deg/minute) was established during cultivation. Some electrophysical and photoelectric properties of Si-Si1-xGex-(Si1-xGex)1-z(Al1-yGayAs)z-Si1-xGex-(Si1-xGex)1-z(Al1-yGayAs)z structures were determined.

DOI:10.12693/APhysPolA.142.280 topics: solution-melt, epitaxy, films, solid solution