Simulation of The Impact of Bulk Selenium Composition Variation in CIGSSe Solar Cell

G.M. Albalawneha, M.M. Ramlib, d, M.Z.M. Zainc, Z. Saulib, d, M. Nabiałeke, K. Jeże aInstitute of Nano Electronic Engineering, Universiti Malaysia Perlis, 01000 Kangar, Perlis, Malaysia bFaculty of Electronic Engineering Technology, Universiti Malaysia Perlis (UniMAP), Pauh Putra Campus, 02600, Arau, Perlis, Malaysia cFaculty of Mechanical Engineering Technology, Universiti Malaysia Perlis (UniMAP), Pauh Putra Campus, 02600, Arau, Perlis, Malaysia dGeopolymer and Green Technology (CeGeoGTech), Universiti Malaysia Perlis (UniMAP), Pauh Putra Campus, 02600, Arau, Perlis, Malaysia eDepartment of Physics, Faculty of Production Engineering and Materials Technology, Czestochowa University of Technology, al. Armii Krajowej 19, 42-200 Częstochowa, Poland

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This study analytically investigates the effect of different ratios of elemental sulphur to elemental selenium on the performance of chalcopyrite Cu(In,Ga)(S,Se)2 (CIGSSe) thin-film solar cell. The influence of the various ratios x=S/(S+Se) on photovoltaic parameters was simulated using Solar Cell Capacitance Simulator software. The simulated band diagram for both Cu(In,Ga)S2 (CIGS) and Cu(In,Ga)Se2 (CIGSe) shows band banding at the back of the CIGS layer, whereas in CIGSe it is flat; this brings to the fore the issue of back contact in high content sulphur absorbers. The simulation for quantum efficiency shows that the band edge of the solar cell device is shifted to a shorter wavelength with increasing sulphur content. Generally, Se incorporation improves photovoltaic parameters and consequently enhances the solar cell performance. The optimal stoichiometry was obtained for CuIn0.7Ga0.3(S0.3Se0.7)2, CIGSe, and CIGS with an efficiency of 18.4%, 17.5%, and 11.3%, respectively.

DOI:10.12693/APhysPolA.142.28 topics: CIGS solar cells, sulfurization, thin films, selenization