Recent Progress in Crystal Growth of Bulk GaN |
| M. Boćkowski, I. Grzegory
Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland |
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| State of the art in crystallization of bulk GaN is reviewed and discussed. Fundamental physical barriers making crystal growth of GaN difficult are indicated. The Na-flux, ammonothermal and halide vapor phase epitaxy methods are presented as the most advanced and promising ones. The high nitrogen pressure solution approach developed at IHPP PAS is mentioned as a starting point of bulk GaN research. |
DOI:10.12693/APhysPolA.141.167 topics: crystal growth from solution, crystal growth from gas phase, gallium nitride (GaN) |