Degradation-Reduction Features of Electrophysical Characteristics of Irradiated Gallium Phosphide Light-Emitting Diodes |
| R.M. Vernyduba, O.I. Kyrylenkoa, O.V. Konorevab, O.I. Radkevychc, D.P. Stratilatd, V.P. Tartachnykd
aNational Pedagogical Dragomanov University, Kyiv, Ukraine bE.O. Paton Electric Welding Institute of the NAS of Ukraine, Kyiv, Ukraine cSE ``SRI of Microdevices'' STC ``Institute for Single Crystals'' of the NAS of Ukraine, Kyiv, Ukraine dInstitute for Nuclear Research of the NAS of Ukraine, Kyiv, Ukraine |
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| The results of studies of the current-voltage and electroluminescent characteristics of the original GaP LEDs and those irradiated by electrons with E=2 MeV and F=8.2×1016 cm-2 are presented. The data of isochronous annealing of samples containing defects of technological and radiation origin are analyzed. Radiation damage coefficients for the lifetime of minority charge carriers in diodes irradiated by electrons and α++ particles with E=28 MeV have been determined. |
DOI:10.12693/APhysPolA.140.141 topics: LED, radiation, annealing, dislocation |