Investigation of Parameters of Band-Pass Filters on Conductivity of p-Si and p-Ge Semiconductors

V. Rusena, A. Katkevičiusa, S. Tolvaišienėb, D. Plonisa aVilnius Gediminas Technical University, Department of Electronic Systems, Naugarduko Str. 41-413, LT-03227, Vilnius, Lithuania bVilnius Gediminas Technical University, Department of Electrical Engineering, Naugarduko Str. 41-318, LT-03227, Vilnius, Lithuania

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Wireless communication technologies, including 5G and others, require devices with a reconfigurable frequency range. Frequency selection is performed with the use of various band-pass filters. Structures of the microstrip band-pass filters are popular due to their small dimensions and a convenient procedure of manufacture. We have calculated design parameters of parallel-coupled half-wave band-pass filter by using transmission line theory. The obtained design parameters have been verified with Sonnet°ledR and CST Microwave Studio°ledR software packages. We have chosen p-Si and p-Ge semiconductor substrates for the band-pass filter. The obtained 3.162-3.971 GHz passband is suitable for the 5G applications. The investigation has also showed that the electrical conductivity of the substrate has impact on the S-parameters of the band-pass filter. The passband of the band-pass filter becomes narrower with the increase of the electrical conductivity of the substrate.

DOI:10.12693/APhysPolA.140.122 topics: microwaves, 5G, filters, microstrip