Rapid Thermal Sulfurization of Tantalum Film with Enhanced Specific Capacitance

Huazhong Liua, b, Wenxuan Heb, Xiaolan Wanga, Zhigao Lana, Huoxi Xua aSchool of physics and Telecommunications, Huanggang Normal University, Huanggang, China bDepartment of Basic Courses, Wuhan Donghu University, Wuhan, China

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In this paper, the effect of rapid thermal sulfurization on the electrochemical storage properties of ultra-thin metallic tantalum (Ta) is reported. It was achieved by introducing sulfur (S) onto the surface and subsurface region of the Ta film, which resulted in areal capacitance enhancement as compared to that of the pristine Ta film. Notably, the sulfurized Ta-based electrode delivers an areal capacitance reaching 3.4 mF/cm2 at scan rate of 5 mV/s (equivalent to volumetric capacitance of 261.5 F/cm3), in 1 M Na2SO4 electrolyte solution, with a cycling stability of 76% over 10,000 consecutive cycles). Surface chemistry and morphology of the electrodes before and after sulfurization were investigated and correlated with the electrochemical properties of different electrodes. The present results anticipate tantalum sulfide (TaS) to be a promising material for electrochemical capacitors.

DOI:10.12693/APhysPolA.139.642 topics: thermal sulfurization, electrochemical capacitors, tantalum