Delamination of Large Area Layers of Hexagonal Boron Nitride Grown by MOVPE

J. Iwański, A.K. Dąbrowska, M. Tokarczyk, J. Binder, R. Stępniewski, A. Wysmołek Faculty of Physics, University of Warsaw, L. Pasteura 5, 02-093 Warsaw, Poland

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The possibility to fabricate van der Waals heterostructures on the wafer-scale would open up a wide range of potential applications. Hexagonal boron nitride (hBN) is one of the most important components in many structures of this kind. Obtaining high quality hBN and the ability to transfer large areas to arbitrary surfaces is a must for future applications of many less durable and less stable van der Waals materials. In this work, we point out key factors that allow us to delaminate large areas of hBN layers grown by metal-organic vapor phase epitaxy on two-inch sapphire substrates. Using scanning electron microscopy and X-ray diffraction, we also compare hBN layers before and after the delamination process.

DOI:10.12693/APhysPolA.139.457 topics: delamination, boron nitride, MOVPE, large areas