Reaction Constant Versus Reaction Rate Constant

R. Knizikevičius Department of Physics, Kaunas University of Technology, 73 K. Donelaičio Str., LT-44249 Kaunas, Lithuania

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The chemical etching of intrinsic polycrystalline silicon in Cl2 environment is considered. The theoretically calculated dependences of poly-Si etching rate on pressure of Cl2 molecules at different temperatures are compared with those experimentally measured. Reaction rate constants, found by fitting the experimental data, are converted into reaction constants. It is found that 99.99% of incident Cl2 molecules are scattered from atomically clean Si surface at temperature 800 K. With the increase in pressure of Cl2 molecules, the reaction constant monotonically decreases due to the increased surface coverage by SiCl2 molecules.

DOI:10.12693/APhysPolA.139.93 topics: reaction constant, reaction rate constant, chemical etching