Design and Simulation of InxGa1-xN Based Solar Cells |
| A. Bakiria, B. Zaidia, K. Aouadja, S. Gaguib, M.S. Ullahc
aDepartment of Physics, Faculty of Matter Sciences, LEPCM, University of Batna 1, Batna, Algeria bLaboratory of Semiconductors, Department of Physics, University of Badji-Mokhtar, Annaba, Algeria cDepartment of Electrical and Computer Engineering, Florida Polytechnic University, Lakeland (FL) 33805, USA |
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| The aim of our work was to innovatively design and simulate an InxGa1-xN-based thin-film solar cell which is considered as a promising candidate for high performance solar cells. By inserting SnS, CdS and TCO layers, different cell parameters, such as the efficiency η, the fill factor FF, the current density Jsc, the open circuit voltage Voc and the current-voltage (J-V) characteristics, of four configurations, specifically, InxGa1-xN/SnS/ZnO, InxGa1-xN/CdS/ZnO, InxGa1-xN/In0.5Ga0.5N/ZnO and InxGa 1-xN/SnS/TCO, were investigated. The influence of an SnS, In0.5Ga0.5N and CdS buffer layer on the InxGa1-xN/SnS/ZnO structure and the effect of a TCO layer on the electrical characteristics of the structure were also investigated. It was revealed that the current density increases with the increase in the indium content, however, as the concentration attains a value of 80%, Jcc approximately becomes constant. The no-load voltage Voc was observed to decrease as a function of the indium content (from 50 to 80%), however, it slightly increased for In0.9Ga0.1N and for the binary compound InN. The computed results indicated that the effect of doping concentration and thickness of each layer on the electrical parameters of the InxGa1-xN alloys may result in enhancing the performance of solar cells. |
DOI:10.12693/APhysPolA.139.46 topics: CdS, SnS, InGaN, IWO |