Electrical Response of Silicon Heterojunction Solar Cells with Transparent Conductive Oxide Antireflective Coating

M. Pernýa, V. Šálya, V. Ďurmana, J. Packaa, J. Kurcza, M. Mikolášekb, J. Huranc aInstitute of Power and Applied Electrical Engineering, Slovak University of Technology, Ilkovičova 3, 812 19 Bratislava, Slovakia bInstitute of Electronics and Photonics, Slovak University of Technology, Ilkovičova 3, 812 19 Bratislava, Slovakia cInstitute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 841 04 Bratislava, Slovakia

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This work is focused on the results of the development of solar photovoltaic heterostructures which consist of a combination of amorphous silicon carbide (used as emitter), doped crystalline silicon substrate and deposited thin transparent conductive oxide layer. Two types of transparent conductive oxide layers: indium tin oxide and indium zinc oxide were prepared for the investigation. The advantages and benefits of the conductive oxides applied on prepared solar cell structures are described in this paper. The main contribution of the work is the assessment of the impact of a sputtering current applied at transparent conductive oxide deposition on the resulting photovoltaic properties. It was found that all electrical (charge carrier mobility, electrical conductivity, photovoltaic parameters) as well as optical (transmittance) parameters are strongly dependent on the sputtering setup. The analyses were performed on both, prepared photovoltaic heterostructures and transparent conductive oxide layers deposited on the glass using DC and AC measurement and optical techniques. The sputtering conditions were optimized to get the best photovoltaic behaviour.

DOI:10.12693/APhysPolA.139.39 topics: heterojunction solar cell, ITO, IZO, amorphous silicon carbide