Experimental Drift Velocity Field in Transistor Devices |
| S. Saygı
Department of Physics, Faculty of Art and Science, Gaziosmanpasa University, Tokat, Turkey |
| Full Text PDF |
| An experimental study has been carried out for the velocity field characteristics of AlGaN on AlN/sapphire templates. A pulsed voltage input combination with a four-point measurement technique has been used to determine the drift velocity of electrons as a function of the applied field. Comparative data with earlier templates shows that a device performance depends on low-field mobility and saturated drift velocity. |
DOI:10.12693/APhysPolA.138.554 topics: HEMT, drift velocity, AlGaN |