Two-Dimensionalization of Electron Gas in n-InSe Crystals Induced by Electron Irradiation |
| I. Mintyanskii, P. Savitskii, Z. Kovalyuk
I.M. Frantsevich Institute for Problems of Materials Science of the National Academy of Sciences of Ukraine, Chernivtsi Branch, Iryna Vilde Str. 5, Chernivtsi 58001, Ukraine |
| Received: July 2, 2019; revised version July 22, 2019; in final form December 16, 2019 |
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| The effect of a high-energy (9.2 MeV) electron irradiation with a dose of 1014e cm-2 on the transport of charge carriers across the layers and the conductivity anisotropy is investigated in the range 80 to 400 K for layered n-InSe crystals. It is established that the anisotropy ratio σ⟂/σ∥, being initially high and slightly dependent on temperature, abruptly increases after the e-irradiation and varies with temperature according to an exponential law. The obtained results are explained within a model, which along with 3D electrons predicts the presence of 2D carriers contributing only to charge transport along the layers. It is shown that the role of the latter becomes stronger after the e-irradiation. |
DOI:10.12693/APhysPolA.137.1031 topics: indium selenide, electron irradiation, 2D-3D model, conductivity anisotropy |