Effect of Hydrostatic Pressure on Electronic Structure and Optical Properties of InAs: A First Principle Study

M. Noorafshan Department of Physics, Faculty of Sciences, University of Hormozgan, Bandar-abbas, Iran

Received: December 27, 2019; in final form March 24, 2020

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First principle calculations have been performed to investigate the effect of hydrostatic pressure on the electronic structure and optical properties of the narrow band gap InAs compound. The calculations have been done by the full-potential linearized augmented plane wave method, based on the density functional theory utilizing Wien2k package. The exchange-correlation potential is treated by the generalized gradient approximation and a combination of modified Becke-Johnson plus local-density approximation functional. Regarding the electronic structure, using the band structure calculations at different pressures, the pressure dependence of band gap energy is calculated. In the case of optical properties, the effect of hydrostatic pressure on the real and imaginary parts of the dielectric function ε(ω) is calculated.

DOI:10.12693/APhysPolA.137.1153 topics: InAs compound, hydrostatic pressure, optical properties, electronic structure\\vs*{10pt}