ACTA

Structural Characterization of Epitaxial LSMO Thin Films Grown on LSAT Substrates

M. Španková^a, E. Dobročka^a, V. Štrbík^a, Š. Chromik^a, N. Gál^a, N. Nedelko^b, A. Ślawska-Waniewska^b, P. Gierłowski^b
^aInstitute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 841 04 Bratislava, Slovakia
^bInstitute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, PL-02668 Warsaw, Poland

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High resolution X-ray measurements were used to characterize the crystalline structure of La_0.67Sr_0.33MnO₃ (LSMO) thin films grown on La_0.26Sr_0.76Al_0.61Ta_0.37O₃ (LSAT) substrate under a small compressive strain (-0.2%). The accommodation of lattice mismatch gives rise to a lattice modulation in the structure. A series of linear h scans (rocking curves) across LSMO 004 diffraction for various values of ϕ angle (rotation of sample around [001] axis) was performed to provide better insight into this structural feature. Despite the cubic structure of the substrate the stress relief mechanism of the LSMO film is considerably anisotropic. Whereas in [010] substrate direction no LSMO lattice modulation was observed, in [100] direction a lattice modulation was developed having no influence on good electrical properties of the prepared LSMO films.

DOI:10.12693/APhysPolA.137.744
topics: CMR materials, epitaxial LSMO film, LSAT substrate, structural characterization, lattice modulation, strain