Electronic Properties of AlxGa1-xNyAs1-y Quaternary Semiconducting Alloys Lattice Matched to GaAs |
| F. Faresa, N. Bouarissab, c, N. El-Houda Faresb, d, F. Mezragb, c
aElectronics Department, Faculty of Science, University of Bordj-Bou-Arréridj, 34000, Algeria bLaboratory of Materials Physics and Its Applications, University of M'sila, 28000 M'sila, Algeria cPhysics Department, Faculty of Science, University of M'sila, 28000 M'sila, Algeria dDepartment of Informatics, Faculty of Computer Science and Mathematics, University of Bordj-Bou-Arréridj, 34000, Algeria |
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| Based on a pseudopotential approach under the virtual crystal approximation, the electronic properties, namely the electronic band structure, direct and indirect energy band gaps, valence band width, and antisymmetric band gap of AlxGa1-xNyAs1-y, lattice, matched to GaAs, have been investigated. A detailed comparison is made between our results and previously reported data, wherever possible. In other cases our results are predictions. Our findings show that by varying x and/or y, diverse values can be obtained for the electronic parameters of interest. |
DOI:10.12693/APhysPolA.137.489 topics: electronic properties, quaternaries, lattice matched |