Amorphous Silicon Carbide Nanowires for Optical Sensor Device
A. Boukezzata, S. Bouanik, A. Manseri, S. Kaci, H. Menari, B. Mahmoudi
Centre de Recherche en Technologie des Semi-conducteurs pour l'Energ├ętique (CRTSE), Couches Minces Surfaces et Interfaces (CMSI), Algiers, Algeria
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In this study, amorphous silicon carbide nanowires (NWASC) on Si substrates were fabricated by depositing hydrogenated amorphous SiC thin films on silicon nanowire by RF magnetron sputtering, with different thicknesses. The scanning electron microscopy showed the formation of nanostructured NWASC and strong photoluminescence intensity was noticed. Due to the large surface area and the high stability, the SiC nanowires were used as the Schottky diode optical sensor device (Au/NWASC/Si/Al). The results presented in this work show the impact of the thickness and the surface structuring on the optoelectronic properties of amorphous SiC thin films. Finally, a high photocurrent and high relative spectral response value of Au/NWASC/Si/Al were observed for the thinner amorphous SiC layer.

topics: SiC nanowire, Schottky diode, optical sensor, photocurrent, spectral response