The Effect on the Optical Absorption Coefficients due to the Positions in the Plane of Square GaAs / Al(GaAs) Quantum Well Wire under the Laser Field

B. Bekara, F.K. Bozb, S. Aktasb, S.E. Okanb aTrakya University, Vocational of Kesan, 22800 Edirne, Turkey bTrakya University, Department of Physics, 22030 Edirne, Turkey

Received: March 15, 2019; revised version July 2, 2019; in final form September 30, 2019

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The laser field effects on the electronic and optical properties depending on two different positions in the plane of GaAs/Al (GaAs) quantum wire with square cross sections have been investigated. The electron energy levels and the electronic wave functions of the wires are calculated using the finite differences method within the effective mass approximation. The differences of the total absorption coefficients and the reflection index changes sourced from the cross-sectional shape were determined and explained with and without laser field. From the results the blue shift and red shift effects on the total absorption coefficients and the reflection index changes were identified depending on the laser field strength and the positions of square GaAs/Al(GaAs) quantum well wire in the plane.

DOI:10.12693/APhysPolA.136.882 topics: quantum well wire, intense laser field, absorption coefficient, refractive index changes\\vs*{8pt}