Structural and Optical Properties of GaSe/GaAs(001) Layers Grown by Molecular Beam Epitaxy |
| P. Avdienko, S. Sorokin, I. Sedova, D. Kirilenko, A. Smirnov, I. Eliseev, V. Davydov, S. Ivanov
Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia |
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| This paper reports on molecular beam epitaxy of GaSe 2D-layers on GaAs(001) substrates at growth temperatures of TS~400-540° as well as studies of their structural and optical properties. Transmission electron microscopy and the Raman spectroscopy techniques have established a correlation between the molecular beam epitaxy growth conditions and the GaSe polytypes being formed. It has been shown that GaSe layers grown at TS~400° can be characterized as a γ-GaSe polytype with a rhombohedral crystal lattice structure, whereas the layers grown at TS~500° have a hexagonal structure and possess a ε-GaSe polytype. The latter also exhibit strong near band-edge photoluminescence at T=300 K. The strong anisotropy of the photoluminescence intensity in an array of GaSe nanoplatelets has been revealed. |
DOI:10.12693/APhysPolA.136.608 PACS numbers: 81.15.Hi, 68.37.Lp, 68.37.Hk, 61.46.-w, 61.82.Fk, 78.30.-j |